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  • Bevilacqua, Stella,1981Chalmers tekniska högskola,Chalmers University of Technology (author)

MgB2 Hot-Electron Bolometer Mixers at Terahertz Frequencies

  • Article/chapterEnglish2015

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  • 2015
  • electronicrdacarrier

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  • LIBRIS-ID:oai:research.chalmers.se:26c25e44-798b-414c-836b-4ac91c4fe27d
  • https://research.chalmers.se/publication/231150URI
  • https://doi.org/10.1109/TASC.2014.2365134DOI

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  • Language:English
  • Summary in:English

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  • Subject category:art swepub-publicationtype
  • Subject category:ref swepub-contenttype

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  • In this paper, we compare the performance of MgB2 Hot-Electron Bolometer Mixers operating at Local Oscillator frequencies of 0.6 and 1.63 THz. The minimum noise temperatures that were obtained are 700 and 1150 K for 0.6 and 1.63 THz, respectively. The receiver noise bandwidth is of the order of 2.2-3 GHz for 10-nm-thick HEB devices with a Tc of 8.5 K. Sub-micrometer size HEBs were also fabricated with no degradation of the initial film quality when a 20-nm MgB2 film with a Tc of 22 K was used. In the direct detection mode, the maximum voltage responsivity is in the range of 1-2 kV/W at 1.63 THz and the optimal bias current is around 1/4-1/3 of the Ic at 4.2 K.

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  • Novoselov, Evgenii,1988Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)evgenii (author)
  • Cherednichenko, Serguei,1970Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)serguei (author)
  • Shibata, HiroyukiNippon Telegraph and Telephone Corporation (author)
  • Tokura, YasuhiroNippon Telegraph and Telephone Corporation (author)
  • Chalmers tekniska högskolaNippon Telegraph and Telephone Corporation (creator_code:org_t)

Related titles

  • In:IEEE Transactions on Applied Superconductivity25:3, s. 2301104-1558-25151051-8223

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