Electrical properties of LaLuO3/Si(100) structures prepared by molecular beam deposition

• The paper presents the results of electrical characterization in the wide temperature range (120-320 K) of the interface and bulk properties of high-k LaLuO3 dielectric deposited by molecular beam deposition (MBD) on silicon substrate. The energy distribution of interface state density is presented and typical maxima of 1.2×1011 and 2.5×10 11 eV-1 cm-2 were found at about 0.25-0.3 eV from the silicon valence band. The charge carrier transport through the dielectric at the forward bias was found to occur via Poole-Frenkel mechanism, while variable range hopping conduction (Mott's law) controls the current at the reverse bias.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

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