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Double-Densified Ve...
Double-Densified VerticallyAligned Carbon Nanotube Bundles for Application in 3D Integration High Aspect Ratio TSV Interconnects
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- Mu, Wei, 1985 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Hansson, Josef, 1991 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Sun, Shuangxi, 1986 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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visa fler...
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- Edwards, Michael, 1986 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Fu, Yifeng, 1984 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Jeppson, Kjell, 1947 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Liu, Johan, 1960 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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visa färre...
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(creator_code:org_t)
- ISBN 9781509012046
- 2016
- 2016
- Engelska.
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Ingår i: Proceedings - Electronic Components and Technology Conference. - 0569-5503. - 9781509012046 ; 2016-August, s. 211-216
- Relaterad länk:
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http://dx.doi.org/10...
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https://doi.org/10.1...
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https://research.cha...
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Abstract
Ämnesord
Stäng
- The treatment of densification by vapor on pristineMWCNT bundles are necessary to improve the effective area of the CNT TSV. However, the CNT bundles might tilt partly because of the non-uniform densification at root of the bundle, especially when it comes to the high aspect ratio CNT bundles. In order to solve these problems, a double densification process has been proposed and developed here. First of all, the shape of partial densified CNT bundles were optimized as a function of time. After several steps such as transferring of partial densified CNT bundles into the via, second densification, epoxy filling and chemical mechanical polishing, the CNT filled TSV with aspect ratio of 10 was achieved. The current voltage response of the CNT TSV interconnection indicated good electrical connection was formed. The resistivity of CNT bundles in via was calculated to be around 2-3 milli-ohmcm.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
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Till lärosätets databas
- Av författaren/redakt...
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Mu, Wei, 1985
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Hansson, Josef, ...
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Sun, Shuangxi, 1 ...
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Edwards, Michael ...
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Fu, Yifeng, 1984
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Jeppson, Kjell, ...
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visa fler...
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Liu, Johan, 1960
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visa färre...
- Om ämnet
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- TEKNIK OCH TEKNOLOGIER
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TEKNIK OCH TEKNO ...
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och Nanoteknik
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Proceedings - El ...
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Chalmers tekniska högskola