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High-Temperature El...
High-Temperature Electronic Materials: Silicon Carbide and Diamond
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- Willander, Magnus, 1948 (författare)
- Göteborgs universitet,University of Gothenburg
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- Friesel, Milan, 1948 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Wahab, Q.-U. (författare)
- Linköpings universitet,Linköping University
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- Straumal, B. (författare)
- Russian Academy of Sciences
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(creator_code:org_t)
- Boston, MA : Springer US, 2007
- 2007
- Engelska.
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Ingår i: Springer Handbooks. - Boston, MA : Springer US. ; , s. 537-563
- Relaterad länk:
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https://research.cha...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The physical and chemical properties of wide-band-gap semiconductors make these materials an ideal wide bandgapsemiconductor choice for device fabrication for applications in many different areas, e.g. light emitters, high-temperature and high-power electronics, high-power microwave devices, micro-electromechanical system (MEM) technology, and substrates for semiconductor preparation. These semiconductors have micro-electromechanical system (MEMS) been recognized for several decades as being suitable for these applications, but until recently the low material quality has not allowed the fabrication of high-quality devices. In this material quality chapter, we review the wide-band-gap semiconductors, silicon carbide and diamond. Silicon carbide electronics is advancing from the research stage to commercial production. The commercial availability of single-crystal SiC substrates during the early 1990s gave rise to intense activity in the development of silicon carbide devices. The commercialization started with the release of blue light-emitting diode (LED). The recent release of high-power Schottky diodes was a further demonstration of the progress made towards defect-free SiC substrates. Diamond has superior physical and chemical properties. Silicon-carbide- and diamond-based diamondsilicon carbide (SiC) electronics are at different stages of development. The preparation of high-quality single-crystal substrates of wafer size has allowed recent significant progress in the fabrication of several types of devices, and the development has reached many important milestones. However, high-temperature studies are still scarce, and diamond-based electronics is still in its infancy.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Materialteknik -- Textil-, gummi- och polymermaterial (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering -- Textile, Rubber and Polymeric Materials (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- Schottky Barrier Diode
- Silicon Carbide
- Diamond Film
- Chemical Vapor Deposition Technique
- Chemical Vapor Deposition Diamond
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