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Sodium enhanced oxi...
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Hermannsson, P.G.Háskóli Íslands,University of Iceland
(author)
Sodium enhanced oxidation: Absence of shallow interface traps after removal of sodium ions from the SiO2/4H-SiC interface
- Article/chapterEnglish2013
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LIBRIS-ID:oai:research.chalmers.se:34326c2b-c5ac-41a1-97c1-e26c389426ad
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https://doi.org/10.4028/www.scientific.net/MSF.740-742.749DOI
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https://research.chalmers.se/publication/216028URI
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Language:English
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Summary in:English
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Subject category:kon swepub-publicationtype
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Subject category:ref swepub-contenttype
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We investigate the strong passivation of shallow interface traps located near the SiC conduction band after enhanced oxidation of Si-face 4H-SiC in the presence of sodium. We find that removing the sodium ions present at the SiO2/SiC interface since oxidation by way of bias stress or annealing does not lead to a significant increase in the density of interface traps. The presence of sodium ions at the SiO2/SiC interface is therefore not responsible for the passivation of such interface traps in oxides formed by sodium enhanced oxidation.
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Allerstam, Fredrik,1978Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)e7fral
(author)
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Hauksson, S.Háskóli Íslands,University of Iceland
(author)
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Sveinbjornsson, E. O.Háskóli Íslands,University of Iceland
(author)
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Háskóli ÍslandsChalmers tekniska högskola
(creator_code:org_t)
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In:Materials Science Forum740-742, s. 749-7521662-97520255-5476
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