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- Hermannsson, P.G.Háskóli Íslands,University of Iceland (author)
Sodium enhanced oxidation: Absence of shallow interface traps after removal of sodium ions from the SiO2/4H-SiC interface
- Article/chapterEnglish2013
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- 2013
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- LIBRIS-ID:oai:research.chalmers.se:34326c2b-c5ac-41a1-97c1-e26c389426ad
- https://doi.org/10.4028/www.scientific.net/MSF.740-742.749DOI
- https://research.chalmers.se/publication/216028URI
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- Language:English
- Summary in:English
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- We investigate the strong passivation of shallow interface traps located near the SiC conduction band after enhanced oxidation of Si-face 4H-SiC in the presence of sodium. We find that removing the sodium ions present at the SiO2/SiC interface since oxidation by way of bias stress or annealing does not lead to a significant increase in the density of interface traps. The presence of sodium ions at the SiO2/SiC interface is therefore not responsible for the passivation of such interface traps in oxides formed by sodium enhanced oxidation.
Subject headings and genre
- TEKNIK OCH TEKNOLOGIER Materialteknik hsv//swe
- ENGINEERING AND TECHNOLOGY Materials Engineering hsv//eng
- TDRC
- Sodium enhanced oxidation
- MOS
- Interface states
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- Allerstam, Fredrik,1978Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)e7fral (author)
- Hauksson, S.Háskóli Íslands,University of Iceland (author)
- Sveinbjornsson, E. O.Háskóli Íslands,University of Iceland (author)
- Háskóli ÍslandsChalmers tekniska högskola (creator_code:org_t)
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- In:Materials Science Forum740-742, s. 749-7521662-97520255-5476
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