Purely analytical extraction of an improved nonlinear FinFET model including non-quasi-static effects

• An analytical procedure is proposed for extracting a new nonlinear FinFET model, which accounts for non-quasi static effects. The accuracy and the robustness of the obtained nonlinear model are completely validated through the comparison between simulated and measured device behaviour in both linear and nonlinear cases. This study clearly shows that the inclusion of the non-quasi-static phenomena leads to significant model simulation improvements, which become more pronounced at higher frequency. (C) 2009 Elsevier B.V. All rights reserved.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Semiconductor device modeling

device

accurate

fet model

large-signal measurements

FinFET

mosfets

Non-quasi-static effects

parameter extraction

Nonlinear model

Large signal network analyzer

Publikations- och innehållstyp

art (ämneskategori)

ref (ämneskategori)