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The growth of graphene on Ni–Cu alloy thin films at a low temperature and its carbon diffusion mechanism

Dong, Y. B. (författare)
Beijing University of Technology,Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China.
Guo, Sheng, 1981 (författare)
Chalmers tekniska högskola,Chalmers University of Technology,Chalmers Univ Technol, Dept Ind & Mat Sci, S-41296 Gothenburg, Sweden.
Mao, Huahai, 1971- (författare)
KTH,Materialvetenskap,Thermo-Calc Software AB, Råsundavägen 18, Solna, 16967, Sweden,Kungliga Tekniska Högskolan (KTH),Royal Institute of Technology (KTH)
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Xu, Chen (författare)
Beijing University of Technology,Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China.
Xie, Y. (författare)
Beijing University of Technology,Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China.
Cheng, Chuangtong (författare)
Chinese Academy of Sciences,Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Mao, Xurui (författare)
Chinese Academy of Sciences,Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Deng, J. (författare)
Beijing University of Technology,Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China.
Pan, G. Z. (författare)
Beijing University of Technology,Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China.
Sun, Jie, 1977 (författare)
Beijing University of Technology,Chalmers tekniska högskola,Chalmers University of Technology,Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China.;Chalmers Univ Technol, Dept Microtechnol & Nanosci, Quantum Device Phys Lab, S-41296 Gothenburg, Sweden.
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Beijing University of Technology Beijing Univ Technol, Coll Microelect, Key Lab Optoelect Technol, Beijing 100124, Peoples R China (creator_code:org_t)
2019-11-17
2019
Engelska.
Ingår i: Nanomaterials. - : MDPI AG. - 2079-4991. ; 9:11
  • Tidskriftsartikel (refereegranskat)
Abstract Ämnesord
Stäng  
  • Carbon solid solubility in metals is an important factor affecting uniform graphene growth by chemical vapor deposition (CVD) at high temperatures. At low temperatures, however, it was found that the carbon diffusion rate (CDR) on the metal catalyst surface has a greater impact on the number and uniformity of graphene layers compared with that of the carbon solid solubility. The CDR decreases rapidly with decreasing temperatures, resulting in inhomogeneous and multilayer graphene. In the present work, a Ni–Cu alloy sacrificial layer was used as the catalyst based on the following properties. Cu was selected to increase the CDR, while Ni was used to provide high catalytic activity. By plasma-enhanced CVD, graphene was grown on the surface of Ni–Cu alloy under low pressure using methane as the carbon source. The optimal composition of the Ni–Cu alloy, 1:2, was selected through experiments. In addition, the plasma power was optimized to improve the graphene quality. On the basis of the parameter optimization, together with our previously-reported, in-situ, sacrificial metal-layer etching technique, relatively homogeneous wafer-size patterned graphene was obtained directly on a 2-inch SiO2 /Si substrate at a low temperature (~600◦ C).

Ämnesord

NATURVETENSKAP  -- Kemi -- Materialkemi (hsv//swe)
NATURAL SCIENCES  -- Chemical Sciences -- Materials Chemistry (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Kemiteknik -- Annan kemiteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Chemical Engineering -- Other Chemical Engineering (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Metallurgi och metalliska material (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Metallurgy and Metallic Materials (hsv//eng)
NATURVETENSKAP  -- Kemi (hsv//swe)
NATURAL SCIENCES  -- Chemical Sciences (hsv//eng)

Nyckelord

Insulating substrate
Chemical vapor deposition
Transfer-free
Graphene
Low temperature growth
Lithography-free

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