WFRF:(Gottlob H. D. B.)
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Interface defects in HfO2, LaSiOx and Gd2O3 high-k/metal gate structures on silicon: Energy distribution and passivation
- Hurley, P.K. (author)
- Cherkaoui, K. (author)
- O'Connor, E (author)
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- Groenland, A.W. (author)
- Lemme, M.C. (author)
- Gottlob, H.D.B. (author)
- Schmidt, M (author)
- Hall, S. (author)
- Lu, Y. (author)
- Buiu, O. (author)
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- (creator_code:org_t)
- 2007
- 2007
- English.
- In: Proc. Electrochemical Society Meeting, Washington DC, October 2007.
- Conference paper (peer-reviewed)
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- TEKNIK OCH TEKNOLOGIER -- Annan teknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Other Engineering and Technologies (hsv//eng)
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- ref (subject category)
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- Hurley, P.K.
- Cherkaoui, K.
- O'Connor, E
- Groenland, A.W.
- Lemme, M.C.
- Gottlob, H.D.B.
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- Schmidt, M
- Hall, S.
- Lu, Y.
- Buiu, O.
- Raeissi, Bahman, ...
- Piscator, Johan, ...
- Engström, Olof, ...
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- ENGINEERING AND TECHNOLOGY
- ENGINEERING AND ...
- and Other Engineerin ...
- Articles in the publication
- Proc. Electroche ...
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- Chalmers University of Technology
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