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  • Ferdos, Fariba,1966Chalmers tekniska högskola,Chalmers University of Technology (author)

Optimisation of MBE growth conditions for InAs quantum dots on (001) GaAs for 1.3 μm luminescence

  • Article/chapterEnglish2001

Publisher, publication year, extent ...

  • 2001

Numbers

  • LIBRIS-ID:oai:research.chalmers.se:39331758-a323-43a3-9098-129f9c42e6f1
  • https://doi.org/10.1016/S0022-0248(01)01003-XDOI
  • https://research.chalmers.se/publication/18258URI

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  • Language:English
  • Summary in:English

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  • Subject category:art swepub-publicationtype
  • Subject category:ref swepub-contenttype

Notes

  • We present a study of the optimised growth conditions for InAs quantum dots (QDs) grown on GaAs substrates by solid source molecular beam epitaxy (SSMBE). Growth conditions for best luminescence intensity and linewidth were found within narrow windows of substrate temperature (500-520°C) and nominal InAs layer thickness (3.3-3.7 monolayers). The emission wavelength of such InAs QDs capped by GaAs was around 1.24 ?m. However, this is redshifted to 1.3 ?m or more by capping the InAs QDs with a thin layer of InxGa1-xAs. The results show that both In content and thickness of the capping layer can be used to tune the emission wavelength. Atomic force microscopy images show that the surface recovers to two-dimensional when depositing In0.2Ga0.8As while remaining three-dimensional when depositing In0.4Ga0.6As.

Subject headings and genre

Added entries (persons, corporate bodies, meetings, titles ...)

  • Sadeghi, Mahdad,1964Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)mahdad (author)
  • Zhao, Qing Xiang,1962Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)zhao (author)
  • Wang, Shu Min,1963Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)shumin (author)
  • Larsson, Anders,1957Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)andersla (author)
  • Chalmers tekniska högskola (creator_code:org_t)

Related titles

  • In:Journal of Crystal Growth227-228, s. 1140-50022-0248

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