ZrO2 gate dielectrics prepared by e-beam deposition of Zr and YSZ films and post annealing processes

• In this paper we present the electrical performance of MOS capacitors with ZrO2 gate dielectric prepared by e-beam evaporation of zirconium and yttrium stabilized zirconia (YSZ) and subsequent thermal treatment. To this stage we have reached an equivalent oxide thickness (EOT) of 1.9 nm. The effect of post-oxidation annealing on Zr incorporation into the Si substrate is investigated. SIMS analysis showed no signs of Zr diffusion in the substrate at temperatures as high as 900°C and that significant diffusion occurs only at 1100°C

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

dielectric thin films

CMOS integrated circuits

permittivity

diffusion

integrated circuit testing

MOS capacitors

oxidation

annealing

secondary ion mass spectra

zirconium compounds

electron beam deposition

Publikations- och innehållstyp

kon (ämneskategori)

ref (ämneskategori)