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- Johansson, MikaelChalmers tekniska högskola,Chalmers University of Technology (author)
ZrO2 gate dielectrics prepared by e-beam deposition of Zr and YSZ films and post annealing processes
- Article/chapterEnglish2002
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- 2002
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- LIBRIS-ID:oai:research.chalmers.se:3f9ec250-57be-4449-9b0f-90729f0fb7ce
- https://research.chalmers.se/publication/17785URI
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- Language:English
- Summary in:English
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- In this paper we present the electrical performance of MOS capacitors with ZrO2 gate dielectric prepared by e-beam evaporation of zirconium and yttrium stabilized zirconia (YSZ) and subsequent thermal treatment. To this stage we have reached an equivalent oxide thickness (EOT) of 1.9 nm. The effect of post-oxidation annealing on Zr incorporation into the Si substrate is investigated. SIMS analysis showed no signs of Zr diffusion in the substrate at temperatures as high as 900°C and that significant diffusion occurs only at 1100°C
Subject headings and genre
- TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik Annan elektroteknik och elektronik hsv//swe
- ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering Other Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
- dielectric thin films
- CMOS integrated circuits
- permittivity
- diffusion
- integrated circuit testing
- MOS capacitors
- oxidation
- annealing
- secondary ion mass spectra
- zirconium compounds
- electron beam deposition
Added entries (persons, corporate bodies, meetings, titles ...)
- Yousif, M. Y. A.,1963Chalmers tekniska högskola,Chalmers University of Technology (author)
- Sareen, Alok,1972Chalmers tekniska högskola,Chalmers University of Technology (author)
- Lundgren, Per,1968Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)boris (author)
- Bengtsson, Stefan,1961Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)stefanb (author)
- Södervall, Ulf,1954Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)f8bus (author)
- Chalmers tekniska högskola (creator_code:org_t)
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- In:ESSDERC 2002. Proceedings of the 32nd European Solid-State Device Research Conference, s. 419-
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