Resistive HEMT-mixer with very low LO-power requirements and low intermodulation

• The channel resistance of a High Electron Mobility Transistor (HEMT) is used as a time variable resistor to accomplish frequency mixing. An X-band image rejected mixer was constructed and pseudomorphic HEMTs were fabricated in order to investigate the performance. Acceptable conversion is obtained at very low LO-power. The experimental -1 dB compression point referred to the output is found to be approximately 3 dB lower than the LO-power.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

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kon (ämneskategori)

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