Transfer-free, lithography-free, and micrometer-precision patterning of CVD graphene on SiO 2 toward all-carbon electronics

A method of producing large area continuous graphene directly on SiO 2 by chemical vapor deposition is systematically developed. Cu thin film catalysts are sputtered onto the SiO 2 and pre-patterned. During graphene deposition, high temperature induces evaporation and balling of the Cu, and the graphene "lands onto" SiO 2 . Due to the high heating and growth rate, continuous graphene is largely completed before the Cu evaporation and balling. 60 nm is identified as the optimal thickness of the Cu for a successful graphene growth and μm-large feature size in the graphene. An all-carbon device is demonstrated based on this technique.

Xie, YiyangBeijing University of Technology (författare)
Xu, C.Beijing University of Technology (författare)
Li, X. J.Beijing University of Technology (författare)
Deng, JunBeijing University of Technology (författare)
Fan, X.Beijing University of Technology (författare)
Pan, G. Z.Beijing University of Technology (författare)
Wang, QiuhuaBeijing University of Technology (författare)
Xiong, FangzhuBeijing University of Technology (författare)
Fu, YafeiBeijing University of Technology (författare)
Sun, Jie,1977Beijing University of Technology,Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)jiesu (författare)
Beijing University of TechnologyChalmers tekniska högskola (creator_code:org_t)

Av författaren/redakt...: Dong, Y. B.; Xie, Yiyang; Xu, C.; Li, X. J.; Deng, Jun; Fan, X.; visa fler...; Pan, G. Z.; Wang, Qiuhua; Xiong, Fangzhu; Fu, Yafei; Sun, Jie, 1977; visa färre...

Om ämnet

TEKNIK OCH TEKNOLOGIER: TEKNIK OCH TEKNO ...; och Materialteknik; och Annan materialte ...

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.