As3d core level studies of (GaMn)As annealed under As capping

• The surface of a Ga(0.95)Mn(0.05)As layer subjected to low temperature annealing under As capping has been studied by core level photoemission with focus on As3d spectrum. By detailed comparison with the surface of pure GaAs subjected to the same surface treatment, the As spectral component of the reacted surface layer has been identified. The relative intensity of this component is consistent with the notion of an MnAs monolayer terminating the annealed (GaMn)As surface.

Subject headings

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Core level photoemission

As3d spectrum

Post-growth annealing

(GaMn)As

Post-growth annealing

(GaMn)As

Core level photoemission

As3d spectrum

Publication and Content Type

art (subject category)

ref (subject category)