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The influence of su...
The influence of surface micro-roughness on bondability
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- Bergh, Mats, 1968 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Bengtsson, Stefan, 1961 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Andersson, Mats O., 1963 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 1995
- 1995
- English.
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In: Proceedings of the Third International Symposium on Semiconductor Wafer Bonding: Physics and Applications. ; , s. 126-
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Abstract
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- The requirements on a surface in terms of micro-roughness necessary to achieve spontaneous bonding on wafer contact have been investigated. Wafers from four different manufacturers, all having their special surface characteristics, were evaluated using atomic force microscopy. Their room temperature bondability was investigated using the contact wave velocity and the surface energy of the formed bond as parameters. Different wet cleaning procedures were used to modify the micro-roughness of the silicon surface. It is found that the surface rms roughness value is not a good measure for judging the bondability of a surface. Instead we propose the use of the Fourier spectrum of the surface roughness. The occurrence of low, ~0.001 Å-1, spatial frequency components of large amplitude in the Fourier spectrum of the surface roughness may affect the bondability of the surface negatively while higher frequency components are not as important
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- surface energy
- wafer bonding
- surface cleaning
- Fourier transforms
- atomic force microscopy
- surface topography
Publication and Content Type
- kon (subject category)
- ref (subject category)
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