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An efficient parame...
An efficient parameter extraction algorithm for MOS transistor models
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- Karlsson, Peter R., 1963 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Jeppson, Kjell, 1947 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 1992
- 1992
- Engelska.
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Ingår i: IEEE Transactions on Electron Devices. - : Institute of Electrical and Electronics Engineers (IEEE). - 1557-9646 .- 0018-9383. ; 39:9, s. 2070 - 2076
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Abstract
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- A general, direct parameter extraction algorithm that uses a small number of data points has been developed for MOS transistor models. This extraction algorithm has been tested using two transistor models in SPICE, MOS3, and BSIM. The basic idea of the algorithm is to use only one data point for each transistor parameter. Appropriate selection of the data points ensures physically reasonable values of most extracted parameters. Analytical expressions or rapidly converging numerical equations are used to calculate the parameters. Interaction between different parameters are taken into account. Good agreement between measured and simulated data is obtained from only 15 and 25 data points for MOS3 and BSIM, respectively. The total extraction time for a single transistor is around 40 s for MOS3 and 1 min for BSIM.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Circuit simulation
- Equations
- Production control
- MOSFETs
- Integrated circuit modeling
- SPICE
- Data mining
- Semiconductor device modeling
- Parameter extraction
- Threshold voltage
Publikations- och innehållstyp
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- ref (ämneskategori)
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