Search: id:"swepub:oai:research.chalmers.se:5804a7b4-657c-4a60-8136-948b6eca9e3f" >
On the nature of th...
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Mitrovic, I. Z.University of Liverpool
(author)
On the nature of the interfacial layer in ultra-thin TiN/LaluO3 gate stacks
- Article/chapterEnglish2012
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AIP Publishing,2012
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LIBRIS-ID:oai:research.chalmers.se:5804a7b4-657c-4a60-8136-948b6eca9e3f
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https://doi.org/10.1063/1.4746790DOI
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https://research.chalmers.se/publication/162581URI
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Language:English
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Summary in:English
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Subject category:art swepub-publicationtype
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Subject category:ref swepub-contenttype
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We present a detailed investigation on the nature of the interfacial layer (IL) in ultra-thin TiN/LaLuO3 (LLO) gate stacks, which is of importance to facilitate CMOS scaling. The molecular beam deposited LaLuO3 films are found to be amorphous by high-resolution transmission electron microscopy. A similar to 9 angstrom thick LaLuO3/interlayer transition observed by medium energy ion scattering correlates with the presence of a dual silicate/SiO2-like interfacial layer derived from the analysis of photoelectron line positions and electron energy loss spectra. A theoretical model is used for the dielectric transition in a bi-layer LaLuO3/IL structure, linking physical and electrical characterization data. The obtained leakage current of 10(-3) A/cm(2) at 1.5 V and equivalent oxide thickness of 0.75 nm for TiN/LaLuO3 gate stacks are adequate for scaling in the 14-12 nm node.
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Hall, S.University of Liverpool
(author)
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Sedghi, N.University of Liverpool
(author)
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Simutis, G.University of Liverpool
(author)
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Dhanak, V. R.University of Liverpool
(author)
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Bailey, P.Daresbury Laboratory
(author)
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Noakes, T. Q. C.Daresbury Laboratory
(author)
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Alexandrou, I.
(author)
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Engström, Olof,1943Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)oleng
(author)
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Lopes, J. M. J.Forschungszentrum Jülich GmbH
(author)
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Schubert, J.Forschungszentrum Jülich GmbH
(author)
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University of LiverpoolDaresbury Laboratory
(creator_code:org_t)
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In:Journal of Applied Physics: AIP Publishing112:4, s. 044102-0021-89791089-7550
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Mitrovic, I. Z.
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Hall, S.
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Sedghi, N.
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Simutis, G.
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Dhanak, V. R.
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Bailey, P.
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Noakes, T. Q. C.
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Alexandrou, I.
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Engström, Olof, ...
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Lopes, J. M. J.
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Schubert, J.
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Materials Engine ...
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- ENGINEERING AND TECHNOLOGY
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and Nano technology
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