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Effect of high temp...
Effect of high temperature oxidation of 4H-SiC on the near-interface traps measured by TDRC
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- Allerstam, Fredrik, 1978 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Sveinbjörnsson, Einar, 1964 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- ISBN 9780878493340
- 2009
- 2009
- Engelska.
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Ingår i: Materials Science Forum. - 1662-9752 .- 0255-5476. - 9780878493340 ; 615 617, s. 537-540
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https://doi.org/10.4...
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Abstract
Ämnesord
Stäng
- In this work the effect of oxidation temperature of 4H-SiC on the density of nearinterface traps is studied. It is seen that the portion of traps with slower emission times decreases with increasing oxidation temperature. Despite this reduction, high temperature oxidation alone is not useful to achieve low density of interface traps at the SiO2/4H-SiC interface.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- TDRC
- MOS
- High temperature oxidation
- Interface trap density
Publikations- och innehållstyp
- kon (ämneskategori)
- ref (ämneskategori)
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