Effect of high temperature oxidation of 4H-SiC on the near-interface traps measured by TDRC

• In this work the effect of oxidation temperature of 4H-SiC on the density of nearinterface traps is studied. It is seen that the portion of traps with slower emission times decreases with increasing oxidation temperature. Despite this reduction, high temperature oxidation alone is not useful to achieve low density of interface traps at the SiO2/4H-SiC interface.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

TDRC

MOS

High temperature oxidation

Interface trap density

Publikations- och innehållstyp

kon (ämneskategori)

ref (ämneskategori)