SwePub
Sök i LIBRIS databas

  Extended search

id:"swepub:oai:research.chalmers.se:5a1553ca-237b-4394-8956-a526a11240b6"
 

Search: id:"swepub:oai:research.chalmers.se:5a1553ca-237b-4394-8956-a526a11240b6" > Vertically aligned ...

  • 1 of 1
  • Previous record
  • Next record
  •    To hitlist
  • Sun, Shuangxi,1986Chalmers tekniska högskola,Chalmers University of Technology (author)

Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects

  • Article/chapterEnglish2016

Publisher, publication year, extent ...

  • 2016-07-07
  • IOP Publishing,2016

Numbers

  • LIBRIS-ID:oai:research.chalmers.se:5a1553ca-237b-4394-8956-a526a11240b6
  • https://research.chalmers.se/publication/243676URI
  • https://doi.org/10.1088/0957-4484/27/33/335705DOI

Supplementary language notes

  • Language:English
  • Summary in:English

Part of subdatabase

Classification

  • Subject category:art swepub-publicationtype
  • Subject category:ref swepub-contenttype

Notes

  • For future miniaturization of electronic systems using 3D chip stacking, new fine-pitch materials for through-silicon-via (TSV) applications are likely required. In this paper, we propose a novel carbon nanotube (CNT)/copper nanocomposite material consisting of high aspect ratio, vertically aligned CNT bundles coated with copper. These bundles, consisting of hundreds of tiny CNTs, were uniformly coated by copper through electroplating, and aspect ratios as high as 300: 1 were obtained. The resistivity of this nanomaterial was found to be as low as similar to 10(-8) Omega m, which is of the same order of magnitude as the resistivity of copper, and its temperature coefficient was found to be only half of that of pure copper. The main advantage of the composite TSV nanomaterial is that its coefficient of thermal expansion (CTE) is similar to that of silicon, a key reliability factor. A finite element model was set up to demonstrate the reliability of this composite material and thermal cycle simulations predicted very promising results. In conclusion, this composite nanomaterial appears to be a very promising material for future 3D TSV applications offering both a low resistivity and a low CTE similar to that of silicon.

Subject headings and genre

Added entries (persons, corporate bodies, meetings, titles ...)

  • Mu, Wei,1985Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)weim (author)
  • Edwards, Michael,1986Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)micedw (author)
  • Mencarelli, DavideUniversita Politecnica Delle Marche,Marche Polytechnic University (author)
  • Pierantoni, LucaUniversita Politecnica Delle Marche,Marche Polytechnic University (author)
  • Fu, Yifeng,1984Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)yifeng (author)
  • Jeppson, Kjell,1947Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)jeppson (author)
  • Liu, Johan,1960Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)jliu (author)
  • Chalmers tekniska högskolaUniversita Politecnica Delle Marche (creator_code:org_t)

Related titles

  • In:Nanotechnology: IOP Publishing27:33, s. Art no335705-1361-65280957-4484

Internet link

Find in a library

To the university's database

  • 1 of 1
  • Previous record
  • Next record
  •    To hitlist

Search outside SwePub

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Close

Copy and save the link in order to return to this view