Search: id:"swepub:oai:research.chalmers.se:5a1553ca-237b-4394-8956-a526a11240b6" >
Vertically aligned ...
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Sun, Shuangxi,1986Chalmers tekniska högskola,Chalmers University of Technology
(author)
Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects
- Article/chapterEnglish2016
Publisher, publication year, extent ...
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2016-07-07
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IOP Publishing,2016
Numbers
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LIBRIS-ID:oai:research.chalmers.se:5a1553ca-237b-4394-8956-a526a11240b6
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https://research.chalmers.se/publication/243676URI
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https://doi.org/10.1088/0957-4484/27/33/335705DOI
Supplementary language notes
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Language:English
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Summary in:English
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Subject category:art swepub-publicationtype
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Subject category:ref swepub-contenttype
Notes
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For future miniaturization of electronic systems using 3D chip stacking, new fine-pitch materials for through-silicon-via (TSV) applications are likely required. In this paper, we propose a novel carbon nanotube (CNT)/copper nanocomposite material consisting of high aspect ratio, vertically aligned CNT bundles coated with copper. These bundles, consisting of hundreds of tiny CNTs, were uniformly coated by copper through electroplating, and aspect ratios as high as 300: 1 were obtained. The resistivity of this nanomaterial was found to be as low as similar to 10(-8) Omega m, which is of the same order of magnitude as the resistivity of copper, and its temperature coefficient was found to be only half of that of pure copper. The main advantage of the composite TSV nanomaterial is that its coefficient of thermal expansion (CTE) is similar to that of silicon, a key reliability factor. A finite element model was set up to demonstrate the reliability of this composite material and thermal cycle simulations predicted very promising results. In conclusion, this composite nanomaterial appears to be a very promising material for future 3D TSV applications offering both a low resistivity and a low CTE similar to that of silicon.
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Mu, Wei,1985Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)weim
(author)
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Edwards, Michael,1986Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)micedw
(author)
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Mencarelli, DavideUniversita Politecnica Delle Marche,Marche Polytechnic University
(author)
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Pierantoni, LucaUniversita Politecnica Delle Marche,Marche Polytechnic University
(author)
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Fu, Yifeng,1984Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)yifeng
(author)
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Jeppson, Kjell,1947Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)jeppson
(author)
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Liu, Johan,1960Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)jliu
(author)
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Chalmers tekniska högskolaUniversita Politecnica Delle Marche
(creator_code:org_t)
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In:Nanotechnology: IOP Publishing27:33, s. Art no335705-1361-65280957-4484
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Sun, Shuangxi, 1 ...
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Mu, Wei, 1985
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Edwards, Michael ...
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Mencarelli, Davi ...
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Pierantoni, Luca
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Fu, Yifeng, 1984
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Jeppson, Kjell, ...
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Liu, Johan, 1960
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- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Materials Engine ...
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Nanotechnology
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Chalmers University of Technology