Enhanced high-frequency performance of top-gated graphene FETs due to substrate-induced improvements in charge carrier saturation velocity

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Asad, Muhammad,1986Chalmers tekniska högskola,Chalmers University of Technology (author)

Enhanced high-frequency performance of top-gated graphene FETs due to substrate-induced improvements in charge carrier saturation velocity

Article/chapterEnglish2021

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2021
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LIBRIS-ID:oai:research.chalmers.se:614bbdf3-ed16-4c69-b341-125dd075a8ef
https://research.chalmers.se/publication/522150URI
https://doi.org/10.1109/TED.2020.3046172DOI
https://research.chalmers.se/publication/521060URI

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Language:English
Summary in:English

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High-frequency performance of top-gated graphene field-effect transistors (GFETs) depends to a large extent on the saturation velocity of the charge car-riers, a velocity limited by inelastic scattering by surface optical phonons from the dielectrics surrounding the chan-nel. In this work, we show that by simply changing the graphene channel surrounding dielectric with a material having higher optical phonon energy, one could improve the transit frequency and maximum frequency of oscillation of GFETs. We fabricated GFETs on conventional SiO2/Si substrates by adding a thin Al2O3 interfacial buffer layer on top of SiO2/Si substrates, a material with about 30% higher optical phonon energy than that of SiO2, and compared performance with that of GFETs fabricated without adding the interfacial layer. From S-parameter measurements, a transit frequency and a maximum frequency of oscillation of 43 GHz and 46 GHz, respectively, were obtained for GFETs on Al2O3 with 0.5 µm gate length. These values are approximately 30% higher than those for state-of-the-art GFETs of the same gate length on SiO2. For relating the improvement of GFET high-frequency performance to improvements in the charge carrier saturation velocity, we used standard methods to extract the charge carrier veloc-ity from the channel transit time. A comparison between two sets of GFETs with and without the interfacial Al2O3 layer showed that the charge carrier saturation velocity had increased to 2·10^7 cm/s from 1.5·10^7 cm/s.

Subject headings and genre

TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik hsv//swe
ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
TEKNIK OCH TEKNOLOGIER Nanoteknik hsv//swe
ENGINEERING AND TECHNOLOGY Nano-technology hsv//eng
TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik Annan elektroteknik och elektronik hsv//swe
ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering Other Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
graphene
maximum frequency of oscillation
Field-effect transistors (FETs)
transit frequency
optical phonons
saturation velocity

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Jeppson, Kjell,1947Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)jeppson (author)
Vorobiev, Andrei,1963Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)vorobiev (author)
Bonmann, Marlene,1988Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)marbonm (author)
Stake, Jan,1971Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)stake (author)
Chalmers tekniska högskola (creator_code:org_t)

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In:IEEE Transactions on Electron Devices68:2, s. 899-9021557-96460018-9383

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