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Electrical Properti...
Electrical Properties of Si-SiO2-Si Nanogaps
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- Berg, Jonas, 1973 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Che, Franklin, 1974 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Lundgren, Per, 1968 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Enoksson, Peter, 1957 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Bengtsson, Stefan, 1961 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2005-08-16
- 2005
- Engelska.
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Ingår i: Nanotechnology. - : IOP Publishing. - 1361-6528 .- 0957-4484. ; 16:10, s. 2197-2202
- Relaterad länk:
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https://doi.org/10.1...
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https://research.cha...
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Abstract
Ämnesord
Stäng
- The chances of attaching organic molecules to silicon surfaces can be considerably enhanced if a robust nanogap structure with silicon electrodes can be used to connect the molecules. We describe the electrical properties of such an electrode structure, with a separation of the silicon surfaces in the 37 nm range. These silicon nanogaps are manufactured by partly removing the silicon dioxide insulator from a siliconoxidesilicon material stack, by using a selective oxide etchant. After the activation of the gap (the etching), current instabilities appear, which are comparable to the properties of thin oxides after soft breakdown. Applying a constant voltage can reduce these current instabilities. We also address the issue of surface leakage currents for these nanogap structures.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Nyckelord
- Silicon nanogaps
- Surface leakage currents
- Molecular electronics
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