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Fabrication and bonding of In bumps on Micro-LED with 8 μ m pixel pitch

Jiang, Bing-Xin (author)
Fuzhou University
Chen, Hui (author)
Fuzhou University
Zhang, Wen-Jing (author)
Fuzhou University
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Lan, Jin-Hua (author)
Fuzhou University
Yang, Tian-Xi (author)
Lin, Chang (author)
Fuzhou University
Huang, Zhong-Hang (author)
Zhang, Kai-Xin (author)
Fuzhou University
Zhu, Xue-Qi (author)
Fuzhou University
He, Jun (author)
Fuzhou University
Yang, Yi-Fan (author)
Fuzhou University
Zhang, Yong-Ai (author)
Fuzhou University
Yan, Qun (author)
Fuzhou University
Sun, Jie, 1977 (author)
Chalmers tekniska högskola,Chalmers University of Technology
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 (creator_code:org_t)
2024
2024
English.
In: ENGINEERING RESEARCH EXPRESS. - 2631-8695. ; 6:2
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Indium (In) is currently used to fabricate metal bumps on micro-light-emitting diode (Micro-LED) chips due to its excellent physical properties. However, as Micro-LED pixel size and pitch decrease, achieving high-quality In bumps on densely packed Micro-LED chips often presents more challenges. This paper describes the process of fabricating In bumps on micro-LEDs using thermal evaporation, highlighting an issue where In tends to grow laterally within the photoresist pattern, ultimately blocking the pattern and resulting in undersized and poorly dense In bumps on the Micro-LED chip. To address this issue, we conducted numerous experiments to study the height variation of In bumps within a range of photoresist aperture sizes (3 mu m -7 mu m) under two different resist thickness conditions (3.8 mu m and 4.8 mu m). The results showed that the resist thickness had a certain effect on the height of In bumps on the Micro-LED chip electrodes. Moreover, we found that, with the photoresist pattern size increasing under constant resist thickness conditions, the height and quality of the bumps significantly improved. Based on this finding, we rationalized the adjustment of the photoresist pattern size within a limited emission platform range to compensate for the height difference of In bumps caused by different resist thicknesses between the cathode and anode regions. Consequently, well-shaped and dense In bumps with a maximum height of up to 4.4 mu m were fabricated on 8 mu m pitch Micro-LED chips. Afterwards, we bonded the Micro-LED chip with indium bumps to the CMOS chip, and we found that we could successfully control the CMOS chip to drive the Micro-LED chip to display specific characters through the Flexible Printed Circuit (FPC). This work is of significant importance for the fabrication of In bumps on Micro-LED chips with pitches below 10 mu m and subsequent bonding processes.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Textil-, gummi- och polymermaterial (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Textile, Rubber and Polymeric Materials (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Annan materialteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Other Materials Engineering (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

height-to-size ratio
Micro-LED
bonding
the growth process of In bump

Publication and Content Type

art (subject category)
ref (subject category)

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