Extraction of carrier transport properties in graphene from microwave measurements

• Carrier transport parameters of graphene grown by chemical vapor deposition (CVD) and graphene-metal contacts are extracted from microwave measurements in the frequency range 0.1–20 GHz using Corbino disks. It is shown that the charged impurities are effectively screened by the high permittivity of the SrTiO3 substrate. In the case of fused silica substrate the charged impurities are not completely screened and the mobility is limited either by the charged impurities or/and resonant scatterers depending on their relative concentration.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Pd contacts

microwave characterisation

impurity screening

Graphene

carrier scattering

drude model

Publication and Content Type

kon (subject category)

ref (subject category)