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Search: WFRF:(Jedrasik Piotr 1957 ) > (2005-2009) > Field-effect transi...

  • Farmakis, F. V. (author)

Field-effect transistors with thin ZnO as active layer for gas sensor applications

  • Article/chapterEnglish2007

Publisher, publication year, extent ...

  • Elsevier BV,2007

Numbers

  • LIBRIS-ID:oai:research.chalmers.se:6b78f539-b7f5-4ec2-9308-faa326e60229
  • https://doi.org/10.1016/j.mee.2008.01.040DOI
  • https://research.chalmers.se/publication/100377URI

Supplementary language notes

  • Language:English
  • Summary in:English

Part of subdatabase

Classification

  • Subject category:kon swepub-publicationtype
  • Subject category:ref swepub-contenttype

Notes

  • Zinc oxide based field-effect devices prepared for gas sensing applications are studied. For this purpose, bottom-gate transistors were fabricated using Pd as source and drain interdigitated electrodes with gate lengths varying from 0.3 to 2 mu m. Thin (50 nm) zinc oxide films were grown with the aid of pulsed laser deposition (PLD) at room temperature and served as active and sensing layer. AFM and XRD analysis demonstrated the polycrystalline nature of the c-axis oriented ZnO films with nanoscale grain size (20-40 nm) with relatively high average roughness. Electrical and gas sensing measurements from the above-mentioned devices are presented. (C) 2008 Elsevier B.V. All rights reserved.

Subject headings and genre

Added entries (persons, corporate bodies, meetings, titles ...)

  • Speliotis, T. (author)
  • Alexandrou, K. P. (author)
  • Tsamis, C. (author)
  • Kompitsas, M. (author)
  • Fasaki, I. (author)
  • Jedrasik, Piotr,1957Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)pije (author)
  • Petersson, Göran,1946Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)gope (author)
  • Nilsson, Bengt,1954Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)beni (author)
  • Chalmers tekniska högskola (creator_code:org_t)

Related titles

  • In:Microelectronic Engineering: Elsevier BV85:5-6, s. 1035-10380167-9317

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