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Thin Al 0.5 Ga 0.5 ...
Thin Al 0.5 Ga 0.5 N/GaN HEMTs on QuanFINE ® Structure
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- Ding Yuan, Chen, 1991 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Wen, Kai-Hsin, 1994 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Thorsell, Mattias, 1982 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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visa fler...
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Kordina, O. (författare)
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Chen, J. T. (författare)
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- Rorsman, Niklas, 1964 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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visa färre...
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(creator_code:org_t)
- 2021
- 2021
- Engelska.
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Ingår i: CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. ; , s. 153-155
- Relaterad länk:
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https://research.cha...
Abstract
Ämnesord
Stäng
- The performance of HEMTs fabricated on a thin Al0.5Ga0.5N/GaN heterostructure with a total barrier thickness of 6.5 nm is presented and benchmarked to the epi-structure with a 13 nm thick Al0.3Ga0.7N barrier on an identical QuanFINE® structure. DC transfer characteristics on both samples with a gate length of 100 nm demonstrate a high current above 1 A/mm. A higher extrinsic gm of 550 mS/mm is measured on the sample with a thinner high Al content barrier. Moreover, low trapping effects with a 12-14 % buffer-related dispersion at a VDSQ of 25 V are characterized for both samples, which indicate the advantage of the iron-free QuanFINE® heterostructure.
Ämnesord
- NATURVETENSKAP -- Kemi -- Oorganisk kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Inorganic Chemistry (hsv//eng)
- NATURVETENSKAP -- Kemi -- Materialkemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Materials Chemistry (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- AlGaN
- GaN
- Short channel effect
- QuanFINE ®
- HEMTs
- RF
Publikations- och innehållstyp
- kon (ämneskategori)
- ref (ämneskategori)