Low-frequency and microwave performances of laser-ablated epitaxialNa 0.5 K 0.5 NbO 3 films on high-resistivitySiO 2 /Si substrates

Sökning: LAR1:cth > Low-frequency and m...

Abadei, Saeed,1961Chalmers tekniska högskola,Chalmers University of Technology (författare)

The dielectric properties of laser-ablated 0.5-μm-thick c-axis epitaxialNa 0.5 K 0.5 NbO 3 (NKN) films on high-resistivity (>7.7 kΩ cm) siliconSiO 2 /Si substrates are studied experimentally in the temperature interval of 30–320 K and at frequencies of 1.0 MHz–40 GHz. The films are grown by laser ablation from a stoichiometric target. For the measurements, planar 0.5-μm-thick gold electrodes (interdigital and straight slot) are photolithography defined on the top surface of NKN films. The slot width between the electrodes is 2.0 or 4.0 μm. At low frequencies(f 1. At microwave frequencies(f>10 GHz), the voltage dependence of the capacitance is given by the NKN film. More than a 13% capacitance change at 40 V dc bias and a Q factor of more than 15 are observed at 40 GHz, which make the structure useful for applications in electrically tunable millimeter-wave devices

Gevorgian, Spartak,1948Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)spartak (författare)
Grishin, Alex (författare)
Chalmers tekniska högskola (creator_code:org_t)

Ingår i:Journal of Applied Physics: AIP Publishing91, s. 2267-0021-89791089-7550

Av författaren/redakt...: Abadei, Saeed, 1 ...; Gevorgian, Spart ...; Grishin, Alex

Om ämnet

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.