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Reversible metal-in...
Reversible metal-insulator transition of Ar-irradiated LaAlO3/SrTiO3 interfaces
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- Aurino, Pier Paolo, 1985 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Kalaboukhov, Alexei, 1975 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Tuzla, Nikolina, 1980 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Olsson, Eva, 1960 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Klein, A. (author)
- Technische Universität Darmstadt
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- Erhart, Paul, 1978 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Boikov, Y. A. (author)
- Russian Academy of Sciences
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- Serenkov, I.T. (author)
- Russian Academy of Sciences
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- Sakharov, V.I. (author)
- Russian Academy of Sciences
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- Claeson, Tord, 1938 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Winkler, Dag, 1957 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2015
- 2015
- English.
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In: Physical Review B - Condensed Matter and Materials Physics. - 2469-9950 .- 2469-9969. ; 92:15
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Abstract
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- The conducting state of a quasi-two-dimensional electron gas (q2DEG), formed at the heterointerface between the two wide-bandgap insulators LaAlO3 (LAO) and SrTiO3, can be made completely insulating by low-energy, 150-eV, Ar+ irradiation. The metallic behavior of the interface can be recovered by high-temperature oxygen annealing. The electrical transport properties of the recovered q2DEG are exactly the same as before the irradiation. Microstructural investigations confirm that the transition is not due to physical etching or crystal lattice distortion of the LAO film below its critical thickness. They also reveal a correlation between electrical state, LAO film surface amorphization, and argon ion implantation. The experimental results are in agreement with density functional theory calculations of Ar implantation and migration in the LAO film. This suggests that the metal-insulator transition may be caused by charge trapping in the defect amorphous layer created during the ion irradiation.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Publication and Content Type
- art (subject category)
- ref (subject category)
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Aurino, Pier Pao ...
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Kalaboukhov, Ale ...
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Tuzla, Nikolina, ...
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Olsson, Eva, 196 ...
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Klein, A.
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Erhart, Paul, 19 ...
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Boikov, Y. A.
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Serenkov, I.T.
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Sakharov, V.I.
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Claeson, Tord, 1 ...
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Winkler, Dag, 19 ...
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- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Nano technology
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Physical Review ...
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Chalmers University of Technology