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  • Zeng, Lunjie,1983Chalmers tekniska högskola,Chalmers University of Technology (author)

Tuning Hole Mobility of Individual p-Doped GaAs Nanowires by Uniaxial Tensile Stress

  • Article/chapterEnglish2021

Publisher, publication year, extent ...

  • 2021-04-29
  • American Chemical Society (ACS),2021
  • electronicrdacarrier

Numbers

  • LIBRIS-ID:oai:research.chalmers.se:7e451558-dae2-4d14-9c45-481878d1765e
  • https://doi.org/10.1021/acs.nanolett.1c00353DOI
  • https://research.chalmers.se/publication/524366URI

Supplementary language notes

  • Language:English
  • Summary in:English

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  • Subject category:art swepub-publicationtype
  • Subject category:ref swepub-contenttype

Notes

  • Strain engineering provides an effective way of tailoring the electronic and optoelectronic properties of semiconductor nanomaterials and nanodevices, giving rise to novel functionalities. Here, we present direct experimental evidence of strain-induced modifications of hole mobility in individual gallium arsenide (GaAs) nanowires, using in situ transmission electron microscopy (TEM). The conductivity of the nanowires varied with applied uniaxial tensile stress, showing an initial decrease of similar to 5-20% up to a stress of 1-2 GPa, subsequently increasing up to the elastic limit of the nanowires. This is attributed to a hole mobility variation due to changes in the valence band structure caused by stress and strain. The corresponding lattice strain in the nanowires was quantified by in situ four dimensional scanning TEM and showed a complex spatial distribution at all stress levels. Meanwhile, a significant red shift of the band gap induced by the stress and strain was unveiled by monochromated electron energy loss spectroscopy.

Subject headings and genre

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  • Holmér, Jonatan,1990Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)holmerj (author)
  • Dhall, RohanLawrence Berkeley National Laboratory (author)
  • Gammer, ChristophÖsterreichische Akademie der Wissenschaften,Austrian Academy of Sciences (author)
  • Minor, Andrew M.Lawrence Berkeley National Laboratory,University of California at Berkeley (author)
  • Olsson, Eva,1960Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)f10eva (author)
  • Chalmers tekniska högskolaLawrence Berkeley National Laboratory (creator_code:org_t)

Related titles

  • In:Nano Letters: American Chemical Society (ACS)21:9, s. 3894-39001530-69921530-6984

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