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A new empirical non...
A new empirical nonlinear model for HEMT-devices
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- Angelov, Iltcho, 1943 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Zirath, Herbert, 1955 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Rorsman, Niklas, 1964 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- ISBN 0780306112
- 1992
- 1992
- Engelska.
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Ingår i: 1992 IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 0780306112 ; 3, s. 1583-1586
- Relaterad länk:
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https://research.cha...
Abstract
Ämnesord
Stäng
- A novel signal model for HEMTs (high-electron-mobility transistors) capable of modeling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak and gate-source and gate-drain capacitances, is described. Model parameter extraction is straightforward and is performed for a submicron gate-length ∂-doped pseudomorphic HEMT. The model has been used to predict the DC- and S-parameters of the devices and different nonlinear circuits such as mixers and multipliers with very high accuracy.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
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- ref (ämneskategori)
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