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Spectral engineerin...
Spectral engineering of semiconductor Fabry–Perot laser cavities in the weakly and strongly perturbed regimes
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- Adolfsson, Göran, 1981 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Bengtsson, Jörgen, 1968 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Larsson, Anders, 1957 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2010
- 2010
- English.
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In: Journal of the Optical Society of America B: Optical Physics. - 1520-8540 .- 0740-3224. ; 27:1, s. 118-127
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Abstract
Subject headings
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- By inserting index perturbations at certain positions along a semiconductor Fabry–Perot laser cavity thethreshold gain for one or several of the longitudinal cavity modes can be selectively lowered to facilitate, e.g.,single-mode or two-color operation. Previous design methods were limited to a fairly small number of perturbations,leading to only weakly perturbed cavities and thus a limited freedom in tailoring the spectral propertiesof the laser. In our approach we fully account for all multiple-reflection events and use a search spacethat permits any distribution of the locations and lengths of the perturbations. We are therefore able to designcavities with almost arbitrary spectral properties with very low threshold gain values for, e.g., the lasingmodes of a two-color cavity. Constraining the design by reducing the geometrical freedom, which can be used toincrease the smallest feature size to simplify fabrication, we seamlessly approach the weakly perturbed regimewhile maintaining much of the freedom for spectral engineering.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
Publication and Content Type
- art (subject category)
- ref (subject category)
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