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Power load dependen...
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Tarasov, M.A.
(författare)
Power load dependencies of cold electron bolometer optical response at 350 ghz
- Artikel/kapitelEngelska2014
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Nummerbeteckningar
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LIBRIS-ID:oai:research.chalmers.se:8ab84e6c-bdca-4473-a313-6442433fc291
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https://research.chalmers.se/publication/213632URI
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Språk:engelska
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Sammanfattning på:engelska
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Ämneskategori:kon swepub-publicationtype
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Ämneskategori:ref swepub-contenttype
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Cold electron bolometers integrated with twin-slot antennas have been designed and fabricated. Optical response was measured in 0.06-0.6 K temperature range using black body radiation source at temperature 2-15 K. The responsivity of 0.3109 V/W was measured at 2.7 K radiation temperature. The estimated ultimate dark responsivity at 100 mK can approach Sv=1010 V/W and reduces down to 1.1108 V/W at 300 mK for the sample with absorber volume of 510-20 m3. At high power load levels and low temperatures the changes of tunneling current, dynamic resistance and voltage response have been explained by non-thermal energy distribution of excited electrons. Distribution of excited electrons in such system is of none-Fermi type, electrons with energies of the order of 1 K tunnel from normal metal absorber to superconductor instead of relaxing down to thermal energy kTe. This effect can reduce quantum efficiency of bolometer from hf/kTph in ideal case down to single electron per signal quantum in the high power case.
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Biuppslag (personer, institutioner, konferenser, titlar ...)
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Edelman, V.S.
(författare)
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Ermakov, A.B.
(författare)
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Mahashabde, Sumedh,1985Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)sumedh
(författare)
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Kuzmin, L.S.
(författare)
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Chalmers tekniska högskola
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:25th International Sympsoium on Space Terahertz Technology, ISSTT 2014; Moscow; Russian Federation; 27 April 2014 through 30 April 2014, s. 35-41
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