Symmetrical modeling of GaN HEMTS

• This paper presents a symmetrical small signal model for GaN HEMTs valid for both positive and negative Vds. The model takes advantage of the intrinsic symmetry of the devices typically used for switches. The parameters of the model are extracted using a new symmetrical optimization based extraction method, optimizing simultaneously for both positive and negative drain-source bias points. This ensures a symmetrical small signal model with lower modeling error. The small signal model can be further used to simplify the development of a large-signal model. The small signal model is validated with measured S- parameters of a commercial GaN HEMT.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

Semiconductor device modeling

Parameters extraction

Gallium Nitride

Modeling

HEMTs

Publication and Content Type

kon (subject category)

ref (subject category)