Sökning: WFRF:(Vassilev Vessen 1969)
> (2010-2014) >
H-band MMIC amplifi...
H-band MMIC amplifiers in 250 nm InP DHBT
-
- Eriksson, Klas, 1983 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
-
- Vassilev, Vessen, 1969 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
-
- Zirath, Herbert, 1955 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
-
(creator_code:org_t)
- ISBN 9781457714351
- 2012
- 2012
- Engelska.
-
Ingår i: 19th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2012, Warsaw, 21-23 May 2012. - 9781457714351 ; 2, s. 744-747
- Relaterad länk:
-
http://dx.doi.org/10...
-
visa fler...
-
https://doi.org/10.1...
-
https://research.cha...
-
visa färre...
Abstract
Ämnesord
Stäng
- In this paper, single-stage and multistage amplifiers of two different topologies, common-base with resistive feedback and common-emitter, operating at up to 290 GHz are presented and demonstrated. The amplifiers use an indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) process. The multistage common-emitter amplifier demonstrates a gain above 10 dB from 220 to 280 GHz with a peak gain of 15 dB while the multistage common-base amplifier demonstrates a gain of 16 dB at 265 GHz.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- monolithic microwave integrated circuit (MMIC)
- millimeter-wave
- Amplifier
- InP double-heterojunction bipolar transistor (DHBT)
- H-band
Publikations- och innehållstyp
- kon (ämneskategori)
- ref (ämneskategori)
Hitta via bibliotek
Till lärosätets databas