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S-band discrete and...
S-band discrete and MMIC GaN power amplifiers
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- Nilsson, Joakim (author)
- Saab AB,Saab
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- Billström, Niklas (author)
- Saab AB,Saab
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- Rorsman, Niklas, 1964 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Romanini, Paolo (author)
- SELEX Sistemi integrati
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(creator_code:org_t)
- ISBN 9782874870125
- 2009
- 2009
- English.
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In: European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 39th European Microwave Conference, EuMC 2009. - 9782874870125 ; , s. 495-498
- Related links:
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https://research.cha...
Abstract
Subject headings
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- The use of GaN devices for microwave power amplifiers begins to be a reality in Europe. This paper describes two S-band (2.7-3.3 GHz) high power amplifier (HPA) designs; one discrete 100 W output stage and one 10 W MMIC power amplifier. The discrete power amplifier is designed using two GaN power bars with a total gate width of 19.2 mm. The GaN power bars have been developed by Selex-SI, within the european co-project Korrigan. The MMIC power amplifier was designed using a 0.25 ?m GaN HEMT process supplied and processed by Chalmers.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Publication and Content Type
- kon (subject category)
- ref (subject category)
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