Na0.5K0.5NbO3/SiO2/Si Thin Film Varactor

QC 20100525
Perfectly c-axis oriented micrometer thickNa 0.5 K 0.5 NbO 3 (NKN) films have been prepared on a thermally grown ultrathinSiO 2 template layer onto a Si(001) wafer by the pulsed laser deposition technique. A x-ray diffraction θ–2θ scan reveals multiple-cell structuring of single phase NKN film along the polar axis, while filmsgrown onto amorphous ceramic (Corning) glass show a mixture of slightly c-axis oriented NKN and pyrochlore phases. This implies a small amount ofSiO 2 crystallites distributed in an amorphous matrix inherit Si(001) orientation and promotes highly oriented NKN film growth. NKN filmdielectric permittivityε ′ was found to vary from 114.0 to 107.2 in the frequency range 1 kHz–1 MHz, while the resistivity was on the order of2.6×10 10 Ω cm @ 20 kV/cm. The planar interdigital variable reactance device (varactor) based on theNKN/SiO 2 /Si thin film structure possesses a dissipation factor of 0.8% at 1 MHz and zero bias, electrical tunability of 3.1%, and nA order leakage current at 20 V bias at room temperature.

Koh, Jung-Hyuk (författare)
Grishin, Alex (författare)
Abadei, Saeed,1961Chalmers tekniska högskola,Chalmers University of Technology (författare)
Gevorgian, Spartak,1948Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)spartak (författare)
Grishin, Alexander M.KTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u179x9xt (författare)
Chalmers tekniska högskolaMikroelektronik och informationsteknik, IMIT (creator_code:org_t)

Av författaren/redakt...: Cho, Coong-Rae; Koh, Jung-Hyuk; Grishin, Alex; Abadei, Saeed, 1 ...; Gevorgian, Spart ...; Grishin, Alexand ...

Om ämnet

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.