Low contact resistance in epitaxial graphene devices for quantum metrology

• We investigate Ti/Au contacts to monolayer epitaxial graphene on SiC (0001) for applications in quantum resistance metrology. Using three-terminal measurements in the quantum Hall regime we observed variations in contact resistances ranging from a minimal value of 0.6 Ω up to 11 kΩ. We identify a major source of high-resistance contacts to be due bilayer graphene interruptions to the quantum Hall current, whilst discarding the effects of interface cleanliness and contact geometry for our fabricated devices. Moreover, we experimentally demonstrate methods to improve the reproducibility of low resistance contacts (

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

NATURVETENSKAP  -- Kemi (hsv//swe)

NATURAL SCIENCES  -- Chemical Sciences (hsv//eng)

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