Characterization of InAlAs/InGaAs HFETs with high indium content in the channel grown on GaAs substrate

Rorsman, Niklas,1964Chalmers tekniska högskola,Chalmers University of Technology (författare)

InAlAs/InGaAs HFETs having very high indium content (80 and 100%) in the channel have been fabricated on GaAs and electrically characterized. The extrinsic transconductance were 310 mS/mm (560 mS/mm at 77 K), and the saturation current were 700 mA/mm (600 mA/mm at 77 K) for an InAs channel. The value of fT and fmaxfor this device were measured to be 80 GHz and 50 GHz, respectively. The In0.8Ga 0.2As channel material had extrinsic transconductance of 320 mS/mm (470 mS/mm at 77 K), and the saturation current were 520 mA/mm (440 mA/mm at 77K). The value of fT and fmaxfor this device were measured to be 80 GHz and 50 GHz, respectively

Karlsson, Christer,1967Chalmers tekniska högskola,Chalmers University of Technology (författare)
Zirath, Herbert,1955Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)zirath (författare)
Wang, Shu Min,1963Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)shumin (författare)
Andersson, Thorvald,1946Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)thoring (författare)
Chalmers tekniska högskola (creator_code:org_t)

Ingår i:23rd European Solid State Device Research Conference, ESSDERC 1993, s. 765-7681930-88769782863321355

Av författaren/redakt...: Rorsman, Niklas, ...; Karlsson, Christ ...; Zirath, Herbert, ...; Wang, Shu Min, 1 ...; Andersson, Thorv ...

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