A study of deep energy-level traps at the 4H-SiC/SiO2 interface and their passivation by hydrogen

• This study is focused on characterization of deep energy-level interface traps formed during sodium enhanced oxidation of n-type Si face 4H-SiC. The traps are located 0.9 eV below the SiC conduction band edge as revealed by deep level transient spectroscopy. Furthermore these traps are passivated using post-metallization anneal at 400°C in forming gas ambient. © (2009) Trans Tech Publications, Switzerland.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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