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Investigation of th...
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Fagerlind, Martin,1980Chalmers tekniska högskola,Chalmers University of Technology,Chalmers
(författare)
Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors
- Artikel/kapitelEngelska2010
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AIP Publishing,2010
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electronicrdacarrier
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LIBRIS-ID:oai:research.chalmers.se:9ebee664-6827-488a-9939-565ae7f847e3
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https://research.chalmers.se/publication/124352URI
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https://doi.org/10.1063/1.3428442DOI
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-58167URI
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Språk:engelska
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Sammanfattning på:engelska
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Ämneskategori:art swepub-publicationtype
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Original Publication: M. Fagerlind, F. Allerstam, E.O. Sveinbjornsson, N. Rorsman, Anelia Kakanakova-Gueorguie, Anders Lundskog, Urban Forsberg and Erik Janzén, Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors, 2010, Journal of Applied Physics, (108), 1, 014508. http://dx.doi.org/10.1063/1.3428442 Copyright: American Institute of Physics http://www.aip.org/
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Capacitance-voltage [C(V)] measurements of metal-insulator-semiconductor-heterostructure capacitors are used to investigate the interface between silicon nitride passivation and AlGaN/AlN/GaN heterostructure material. AlGaN/AlN/GaN samples having different silicon nitride passivating layers, deposited using three different deposition techniques, are evaluated. Different interface state distributions result in large differences in the C(V) characteristics. A method to extract fixed charge as well as traps from the C(V) characteristics is presented. Rough estimates of the emission time constants of the traps can be extracted by careful analysis of the C(V) characteristics. The fixed charge is positive for all samples, with a density varying between 1.3 x 10(12) and 7.1 x 10(12) cm(-2). For the traps, the peak density of interface states is varying between 16 x 10(12) and 31 x 10(12) cm(-2) eV(-1) for the three samples. It is concluded that, of the deposition methods investigated in this report, the low pressure chemical vapor deposited silicon nitride passivation shows the most promising results with regards to low densities of interface states. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428442]
Ämnesord och genrebeteckningar
Biuppslag (personer, institutioner, konferenser, titlar ...)
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Allerstam, Fredrik,1978Chalmers tekniska högskola,Chalmers University of Technology,Chalmers(Swepub:cth)e7fral
(författare)
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Sveinbjörnsson, Einar,1964Chalmers tekniska högskola,Chalmers University of Technology,Chalmers(Swepub:cth)einars
(författare)
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Rorsman, Niklas,1964Chalmers tekniska högskola,Chalmers University of Technology,Chalmers(Swepub:cth)rorsman
(författare)
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Kakanakova-Georgieva, Anelia,1970-Linköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)aneka59
(författare)
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Lundskog, AndersLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)andlu37
(författare)
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Forsberg, UrbanLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)urbfo25
(författare)
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Janzén, ErikLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)erija14
(författare)
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Chalmers tekniska högskolaChalmers
(creator_code:org_t)
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Ingår i:Journal of Applied Physics: AIP Publishing108:10021-89791089-7550
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