A 474 GHz HBV Frequency Quintupler Integrated on a 20 µm Thick Silicon Substrate

• We present a silicon integrated Heterostructure Barrier Varactor (HBV) frequency quintupler (x5) operating between 440 GHz and 490 GHz. By epitaxial transfer of InP-based HBV material structure onto silicon-on-insulator (SOI), a uniform and accurate thickness (20 µm) of the frequency quintupler chip is achieved. In a single stage this device delivers 2.8 mW of output power at 474 GHz, when pumped with 400 mW at 94.75 GHz, corresponding to conversion efficiency of 0.75%. The present device exhibits a 3-dB bandwidth of 4%.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

submillimetre waves

epitaxial transfer

frequency multipliers

heterostructure barrier varactors

Compound semiconductors

wafer bonding

THz sources

monolithic integrated circuits

submillimeter wave diodes

Publikations- och innehållstyp

art (ämneskategori)

ref (ämneskategori)