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Giant quantum Hall ...
Giant quantum Hall plateaus generated by charge transfer in epitaxial graphene
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- Alexander-Webber, J. A. (author)
- University Of Oxford,University Of Cambridge,University of Oxford, England; University of Cambridge, England
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- Huang, J. (author)
- University Of Oxford,University of Oxford, England
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- Maude, D. K. (author)
- Centre national de la recherche scientifique (CNRS),CNRS UGA UPS INSA, France
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- Janssen, Tjbm (author)
- National Physical Laboratory (NPL),National Phys Lab, England
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- Tzalenchuk, A.Y. (author)
- National Physical Laboratory (NPL),Royal Holloway University of London,National Phys Lab, England; Royal Holloway University of London, England,Chalmers, Sweden
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- Antonov, V. (author)
- Royal Holloway University of London,Royal Holloway University of London, England
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- Yager, Thomas, 1987 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Lara Avila, Samuel, 1983 (author)
- Chalmers tekniska högskola,Chalmers University of Technology,Chalmers, Sweden
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- Kubatkin, Sergey, 1959 (author)
- Chalmers tekniska högskola,Chalmers University of Technology,Chalmers, Sweden
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- Yakimova, Rositsa (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Nicholas, R. J. (author)
- University Of Oxford,University of Oxford, England
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(creator_code:org_t)
- 2016-07-26
- 2016
- English.
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In: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322 .- 2045-2322. ; 6
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Abstract
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- Epitaxial graphene has proven itself to be the best candidate for quantum electrical resistance standards due to its wide quantum Hall plateaus with exceptionally high breakdown currents. However one key underlying mechanism, a magnetic field dependent charge transfer process, is yet to be fully understood. Here we report measurements of the quantum Hall effect in epitaxial graphene showing the widest quantum Hall plateau observed to date extending over 50 T, attributed to an almost linear increase in carrier density with magnetic field. This behaviour is strong evidence for field dependent charge transfer from charge reservoirs with exceptionally high densities of states in close proximity to the graphene. Using a realistic framework of broadened Landau levels we model the densities of donor states and predict the field dependence of charge transfer in excellent agreement with experimental results, thus providing a guide towards engineering epitaxial graphene for applications such as quantum metrology.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- Electronic properties and devices
- graphene
- Quantum Hall
Publication and Content Type
- art (subject category)
- ref (subject category)
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Alexander-Webber ...
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Huang, J.
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Maude, D. K.
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Janssen, Tjbm
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Tzalenchuk, A.Y.
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Antonov, V.
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Yager, Thomas, 1 ...
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Lara Avila, Samu ...
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Kubatkin, Sergey ...
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Yakimova, Rosits ...
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Nicholas, R. J.
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- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Nano technology
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- NATURAL SCIENCES
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NATURAL SCIENCES
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and Physical Science ...
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and Condensed Matter ...
- Articles in the publication
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Scientific Repor ...
- By the university
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Chalmers University of Technology
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Linköping University