Search: id:"swepub:oai:research.chalmers.se:b7323a6f-eea4-41bd-9c1c-6789b32ad4ae" >
Electric-Based Ther...
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Bremer, Johan,1991Chalmers tekniska högskola,Chalmers University of Technology
(author)
Electric-Based Thermal Characterization of GaN Technologies Affected by Trapping Effects
- Article/chapterEnglish2020
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LIBRIS-ID:oai:research.chalmers.se:b7323a6f-eea4-41bd-9c1c-6789b32ad4ae
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https://doi.org/10.1109/TED.2020.2983277DOI
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https://research.chalmers.se/publication/517627URI
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Language:English
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Summary in:English
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This article presents an electric-based methodology for thermal characterization of semiconductor technologies. It is shown that for technologies such as gallium nitride (GaN) high electron mobility transistors, which exhibit several field induced electron trapping effects, the thermal characterization has to be performed under specific conditions. The electric field is limited to low levels to avoid activation of trap states. At the same time, the dissipated power needs to be high enough to change the operating temperature of the device. The method is demonstrated on a test structure implemented as a GaN resistor with large contact separation. It is used to evaluate the thermal properties of samples with different silicon carbide suppliers and buffer thickness.
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Ding Yuan, Chen,1991Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)chend
(author)
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Malko, AleksandraUnited Monolithic Semiconductors (UMS)
(author)
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Madel, ManfredUnited Monolithic Semiconductors (UMS)
(author)
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Rorsman, Niklas,1964Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)rorsman
(author)
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Gunnarsson, Sten,1976Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)stengu
(author)
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Andersson, KristofferTelefonaktiebolaget L M Ericsson,Ericsson
(author)
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Nilsson, Torbjörn,1962Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)tornilss
(author)
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Raad, Peter E.Southern Methodist University
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Komarov, Pavel L.
(author)
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Sandy, Travis L.
(author)
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Thorsell, Mattias,1982Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)thorsell
(author)
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Chalmers tekniska högskolaUnited Monolithic Semiconductors (UMS)
(creator_code:org_t)
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In:IEEE Transactions on Electron Devices67:5, s. 1952-19581557-96460018-9383
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