Transfer of InP-based HBV epitaxy onto borosilicate glass substrate by anodic bonding

• We present a new fabrication process for epitaxial transfer of InP-based heterostructure barrier varactor diodes, as high frequency varactor multipliers, onto low-dielectric borosilicate glass substrate, employing anodic bonding. The fabricated diodes on the new host substrate display symmetric electrical characteristics with only minor differences compared to those of the reference devices on the original InP substrate.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

III-V SEMICONDUCTORS

GLASS

HBV

EPITAXIAL LIFT-OFF

WAFER BONDING

SUBMILLIMETRE WAVE DEVICES

Publication and Content Type

art (subject category)

ref (subject category)