id:"swepub:oai:research.chalmers.se:b81744d1-c56c-4735-bb6a-7acb424ee832"
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- Gutt, T. (author)
The influence of gate material, SiO2 fabrication method and gate edge effect on interface trap density in 3C-SiC MOS capcitors
- Article/chapterEnglish2012
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- 2012
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- LIBRIS-ID:oai:research.chalmers.se:b81744d1-c56c-4735-bb6a-7acb424ee832
- https://research.chalmers.se/publication/165755URI
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- Language:English
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- Malachowski, T. (author)
- Prewlocki, H. M. (author)
- Engström, Olof,1943Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)oleng (author)
- Bakowski, M. (author)
- Esteve, R. (author)
- Chalmers tekniska högskola (creator_code:org_t)
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- In:Materials Science Forum117, s. 109-1662-97520255-5476
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