Controlling In-Ga-Zn-O thin films transport properties through density changes

In the following study we investigate the effect of the magnetron cathode current (I-c) during reactive sputtering of In-Ga-Zn-O (a-IGZO) on thin-films nanostructure and transport properties. All fabricated films are amorphous, according to X-ray diffraction measurements. However, High Resolution Transmission Electron Microscopy revealed the a-IGZO fabricated at I-C = 70 mA to contain randomly-oriented nanocrystals dispersed in amorphous matrix, which disappear in films deposited at higher cathode current. These nanocrystals have the same composition as the amorphous matrix. One can observe that, while I-C is increased from 70 to 150 mA, the carrier mobility improves from mu(Hall) = 6.9 cm(2)/Vs to mu(Hall) = 9.1 cm(2)/Vs. Additionally, the increase of I-C caused a reduction of the depletion region trap states density of the Ru-Si-O/In-Ga-Zn-O Schottky barrier. This enhancement in transport properties is attributed to the greater overlapping of s-orbitals of the film-forming cations caused by increased density, evidenced by X-ray reflectivity, at a fixed chemical composition, regardless nanostructure of thin films. (C) 2016 Elsevier B.V. All rights reserved.

Boll, Torben,1979Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)torbenb (författare)
Borysiewicz, M. A. (författare)
Taube, A.Politechnika Warszawska,Warsaw University of Technology (författare)
Thuvander, Mattias,1968Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)matthu (författare)
Law, Jiayan,1984Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)jiaya (författare)
Kaminska, E. (författare)
Stiller, Krystyna Marta,1947Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)stiller (författare)
Chalmers tekniska högskolaPolitechnika Warszawska (creator_code:org_t)

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