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20-Gb/s Modulation of Silicon-Integrated Short-Wavelength Hybrid-Cavity VCSELs

Haglund, Emanuel, 1988 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Kumari, Sulakshna (author)
Universiteit Gent,Ghent university
Westbergh, Petter, 1981 (author)
Chalmers tekniska högskola,Chalmers University of Technology
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Gustavsson, Johan, 1974 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Baets, Roel G. (author)
Universiteit Gent,Ghent university
Roelkens, Gunther (author)
Universiteit Gent,Ghent university
Larsson, Anders, 1957 (author)
Chalmers tekniska högskola,Chalmers University of Technology
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 (creator_code:org_t)
2016
2016
English.
In: IEEE Photonics Technology Letters. - 1041-1135 .- 1941-0174. ; 28:8, s. 856 - 859
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • We investigate the dynamics of silicon-integrated 850-nm-wavelength hybrid-cavity vertical-cavity surface-emitting lasers (VCSELs). The VCSELs consist of a GaAs-based half-VCSEL attached to a dielectric distributed Bragg reflector on a silicon substrate using ultra-thin divinylsiloxane-bis-benzocyclobutene adhesive bonding. A 5-µm oxide aperture diameter VCSEL, with a small signal modulation bandwidth of 11 GHz, supports data transmission at bit rates up to 20 Gb/s. The modulation bandwidth and the large signal modulation characteristics are found to be impaired by the high thermal impedance.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)

Keyword

semiconductor lasers
silicon photonics
High-speed modulation
vertical-cavity surface-emitting laser (VCSEL)
optical interconnects
large signal modulation

Publication and Content Type

art (subject category)
ref (subject category)

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