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Electrical properti...
Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD
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- Khosa, Rabia Y. (författare)
- Háskóli Íslands,University of Iceland,Univ Iceland, Iceland; Univ Educ Lahore, Pakistan
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- Chen, Jr-Tai (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Pálsson, K. (författare)
- Háskóli Íslands,University of Iceland,Univ Iceland, Iceland
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- Karhu, Robin (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Ul-Hassan, Jawad (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Rorsman, Niklas, 1964 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology,Chalmers Univ Technol, Sweden
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- Sveinbjörnsson, Einar (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Univ Iceland, Iceland
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(creator_code:org_t)
- Elsevier BV, 2019
- 2019
- Engelska.
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 153, s. 52-58
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https://doi.org/10.1...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We report on the electrical properties of the AlN/4H-SiC interface using capacitance- and conductance-voltage (CV and GV) analysis of AlN/SiC MIS capacitors. The crystalline AlN layers are made by hot wall MOCVD. CV analysis at room temperature reveals an order of magnitude lower density of interface traps at the AlN/SiC interface than at nitrided SiO2/SiC interfaces. Electron trapping in bulk traps within the AlN is significant when the MIS capacitors are biased into accumulation resulting in a large flatband voltage shift towards higher gate voltage. This process is reversible and the electrons are fully released from the AlN layer if depletion bias is applied at elevated temperatures. Current-voltage (IV) analysis reveals that the breakdown electric field intensity across the AlN dielectric is 3–4 MV/cm and is limited by trap assisted leakage. By depositing an additional SiO2 layer on top of the AlN layer, it is possible to increase the breakdown voltage of the MIS capacitors significantly without having much impact on the quality of the AlN/SiC interface.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Materialteknik -- Annan materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering -- Other Materials Engineering (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- Gate dielectrics
- MIS capacitors
- AlN/4H-SiC interface
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