Wafer-scale graphene synthesis, transfer and FETs

Growth and characterization of graphene grown using copper foils as well as copper films on silicon dioxide on silicon substrates were performed. Kinetics of growth and effective activation energy for the graphene synthesis will be discussed for the surface catalytic synthesis of graphene. Conditions for large-scale synthesis of monolayer graphene will be addressed in this talk. Wafer-scale graphene transfer and electrical results will be presented. Based on our preliminary results from capped 100mm wafer scale graphene transistors, we expect a mobility of 4-6 k cm2/Vs with symmetry hole/electron transport. Key considerations and challenges for scaling are discussed and results for graphene growth on the 300mm wafer scale will be discussed.

You, B.Aixtron Limited (författare)
Rupesinghe, N.Aixtron Limited (författare)
Newham, A.Aixtron Limited (författare)
Greenwood, P.Aixtron Limited (författare)
Buttress, S.Aixtron Limited (författare)
Cole, M. T.Aixtron Limited (författare)
Tao, L.The University of Texas at Austin, USA (författare)
Lee, J.The University of Texas at Austin, USA (författare)
Akinwande, D.The University of Texas at Austin, USA (författare)
Celebi, K.Eidgenössische Technische Hochschule Zürich (ETH),Swiss Federal Institute of Technology in Zürich (ETH) (författare)
Park, H.Eidgenössische Technische Hochschule Zürich (ETH),Swiss Federal Institute of Technology in Zürich (ETH) (författare)
Sun, Jie,1977Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)jiesu (författare)
The University of Texas at Austin, USAAixtron Limited (creator_code:org_t)

Ingår i:Proceedings of the IEEE Conference on Nanotechnology, s. 1200-12031944-93991944-93809781479906758

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