Optoelectronic property refinement of FASnI(3) films for photovoltaic application

• Tin (Sn) is a promising substitute for lead (Pb) in organic-inorganic hybrid halide perovskite-photovoltaic devices, but it is prone to delivering low power conversion efficiencies (PCEs) due to the poor quality of Snperovskite films. In this work, anilinium hypophosphite (AHP) co-additive is used to fabricate high-quality FASnI3 (FA+: formamidinium) perovskite films with suppressed phase-segregation and prolonged charge carrier lifetime. Perovskite films containing 0.05 M AHP are used to fabricate solar cells and deliver improved power conversion efficiency (PCE) of up to 5.48% (control devices: 4.04%). AHP eliminates the phase separation caused by SnF2 in the absorber, leading to films with enhanced optoelectronic properties, hence the high performance of AHP-based devices.

Ämnesord

NATURVETENSKAP  -- Kemi -- Annan kemi (hsv//swe)

NATURAL SCIENCES  -- Chemical Sciences -- Other Chemistry Topics (hsv//eng)

Nyckelord

Semiconductors; Solar energy materials; Sn-perovskite; Anilinium hypophosphite

Publikations- och innehållstyp

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